无机薄膜与涂层的生长动力学过程与微观结构演化控制；第三代半导体（碳化硅等）、超宽禁带半导体（金刚石等）；新型化学、物理气相沉积技术与装备；无机薄膜的高通量制备技术

教育经历
2000/09-2004/06   武汉理工大学 材料科学与工程       学士
2004/09-2007/06   武汉理工大学 材料学                      硕士
2007/09-2010/06   武汉理工大学 材料加工工程          博士

工作经历
2010/09-2012/10
华中科技大学         电子科学与技术系       博士后
2011/01-2012/10
东北大学（日本）   金属材料研究所         研究助手
2012/12-
武汉理工大学          新材料研究所           研究员、博士生导师

1. Z. Liu, Y. Cai, R. Tu, Q. Xu, M. Hu, C. Wang, Q. Sun, B. Li, S. Zhang*, C. Wang, T. Goto, L. Zhang, Laser CVD Growth of Graphene/SiC/Si Nano-matrix Heterostructure with Improved Electrochemical Capacitance and Cycle Stability, Carbon N. Y. 175 (2021) 377–386. https://doi.org/10.1016/j.carbon.2021.01.004
2. Q. Sun, R. Tu, Q. Xu, C. Zhang, J. Li, H. Ohmori, M. Kosinova, B. Basu, J. Yan, S. Li, T. Goto, L. Zhang, S. Zhang*, Nanoforest of 3C-SiC/graphene by laser chemical vapor deposition with high electrochemical performance, J. Power Sources. 444 (2020) 227308. https://doi.org/10.1016/j.jpowsour.2019.227308.
3. C. Zhang, Z. Wang, R. Tu, M. Dong, J. Li, M. Yang, Q. Li, J. Shi, H. Li, H. Ohmori, S. Zhang*, L. Zhang, T. Goto, Growth of self-aligned single-crystal vanadium carbide nanosheets with a controllable thickness on a unique staked metal substrate, Appl. Surf. Sci. 499 (2020) 143998-1–5. https://doi.org/10.1016/j.apsusc.2019.143998.
4. Z. Liu, Q. Xu, C. Zhang, Q. Sun, C. Wang, M. Dong, Z. Wang, H. Ohmori, M. Kosinova, T. Goto, R. Tu, S. Zhang*, Applied Surface Science Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC ( 0001 ), Appl. Surf. Sci. 514 (2020) 145938. https://doi.org/10.1016/j.apsusc.2020.145938.
5. C. Zhang, R. Tu, J. Li, M. Yang, Q. Li, J. Shi, H. Li, H. Ohmori, S. Zhang*, L. Zhang, T. Goto, Growth of umbrella-like millimeter-scale single-crystalline graphene on liquid copper, Carbon N. Y. 150 (2019) 356–362. https://doi.org/10.1016/j.carbon.2019.05.013.
6. Q. Sun, M. Yang, J. Li, Q. Xu, R. Tu, Q. Li, S. Zhang*, L. Zhang, T. Goto, H. Ohmori, M. Kosinova, Heteroepitaxial growth of thick 3C-SiC (110) films by Laser CVD, J. Am. Ceram. Soc. 102 (2019) 4480–4491. https://doi.org/10.1111/jace.16297.
7. P. Zhu, M. Yang, Q. Xu, Q. Sun, R. Tu, J. Li, S. Zhang*, Q. Li, L. Zhang, T. Goto, J. Shi, H. Li, H. Ohmori, M. Kosinova, B. Basu, Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD, J. Am. Ceram. Soc. 101 (2018) 3850–3856. https://doi.org/10.1111/jace.15557.
8. R. Tu, Y. Liang, C. Zhang, J. Li, S. Zhang*, M. Yang, Q. Li, T. Goto, L. Zhang, J. Shi, H. Li, H. Ohmori, M. Kosinova, B. Basu, Fast synthesis of high-quality large-area graphene by laser CVD, Appl. Surf. Sci. 445 (2018) 204–210. https://doi.org/10.1016/j.apsusc.2018.03.184.
9. T. Zhu, Y. Liang, C. Zhang, Z. Wang, S. Zhang*, A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni, RSC Adv. 10 (2020) 16088–16093. https://doi.org/10.1039/D0RA00734J.
10.  Q. Xu, Z. Deng, Q. Sun, R. Tu, S. Zhang*, M. Yang, Q. Li, L. Zhang, T. Goto, H. Ohmori, Electrically conducting graphene/SiC(111) composite coatings by laser chemical vapor deposition, Carbon N. Y. 139 (2018) 76–84. https://doi.org/10.1016/j.carbon.2018.06.038.
11.  Q. Xu, P. Zhu, Q. Sun, R. Tu, S. Zhang*, M. Yang, Q. Li, J. Shi, H. Li, L. Zhang, T. Goto, M. Han, J. Yan, S. Li, H. Ohmori, Fast preparation of (111)-oriented β-SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2, J. Am. Ceram. Soc. 101 (2018) 1471–1478. https://doi.org/10.1111/jace.15315.
12.  C. Zhang, J. Huang, R. Tu, S. Zhang*, M. Yang, Q. Li, J. Shi, H. Li, L. Zhang, T. Goto, H. Ohmori, Transfer-free growth of graphene on Al2O3(0001) using three-step method, Carbon N. Y. 131 (2018) 10–17.
13.  Q. Sun, P. Zhu, Q. Xu, R. Tu, S. Zhang*, J. Shi, H. Li, L. Zhang, T. Goto, J. Yan, S. Li, High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition, J. Am. Ceram. Soc. 101 (2018) 1048–1057. https://doi.org/10.1111/jace.15260.
14.  H. Cheng, M. Yang, Y. Lai, M. Hu, Q. Li, R. Tu, S. Zhang*, M. Han, T. Goto, L. Zhang, Transparent highly oriented 3C-SiC bulks by halide laser CVD, J. Eur. Ceram. Soc. 38 (2018) 3057－3063. https://doi.org/10.1016/j.jeurceramsoc.2018.03.015.
15.  R. Tu, D. Zheng, H. Cheng, M. Hu, S. Zhang*, M. Han, T. Goto, L. Zhang, Effect of CH4/SiCl4 ratio on the composition and microstructure of <110>-oriented β-SiC bulks by halide CVD, J. Eur. Ceram. Soc. 37 (2017) 1217–1223. https://doi.org/10.1016/j.jeurceramsoc.2016.11.015.
16.  Q. Xu, P. Zhu, Q. Sun, R. Tu, M. Yang, S. Zhang*, Elimination of double position domains (DPDs) in epitaxial <111>-3C-SiC on Si(111) by laser CVD, Appl. Surf. Sci. 426 (2017) 662–666. https://doi.org/10.1016/j.apsusc.2017.07.239.
17.  C. Zhang, R. Tu, S. Zhang*, J. Huang, T. Gao, M. Yang, Q. Li, J. Shi, L. Zhang, T. Goto, Synthesis of Large Size Uniform Single-Crystalline Trilayer Graphene on Premelting Copper, Carbon N. Y. 122 (2017) 352–360. https://doi.org/10.1016/j.carbon.2017.06.096.
18.  H. Cheng, R. Tu, S. Zhang*, M. Han, T. Goto, L. Zhang, Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition, J. Eur. Ceram. Soc. 37 (2017) 509–515. https://doi.org/10.1016/j.jeurceramsoc.2016.09.017.
19.  P. Zhu, Q. Xu, R. Chen, S. Zhang*, M. Yang, R. Tu, L. Zhang, T. Goto, J. Yan, S. Li, Structural study of beta-SiC (001) films on Si (001) by laser chemical vapor deposition, J. Am. Ceram. Soc. 100 (2017) 1634–1641. https://doi.org/10.1111/jace.14672.
20. R. Tu, D. Zheng, Q. Sun, M. Han, S. Zhang*, Z. Hu, T. Goto, L. Zhang, Ultra-Fast Fabrication of <110>-Oriented β-SiC Wafers by Halide CVD, J. Am. Ceram. Soc. 99 (2016) 84–88.

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5. 国家教育部，装备预研教育部联合基金，太赫兹雷达用立方碳化硅基板材料的快速制备与结构控制，2019-2020
6. 湖北省科技厅，湖北省技术创新专项重大项目，低成本、长寿命、超硬碳化物涂层制备技术，2019-2021
7. 国家国防科技工业局，基础科研挑战专题，多种动态压缩实验钒金属靶的显微结构控制与研究，2017-2020
8. 国家科技部，国家重点研发计划-国际合作专项项目，大尺寸碳化硅的激光化学气相沉积技术及应用合作研发，2014-2017
9. 国际合作项目，卤化物化学气相沉积法制备Ti-Si-C复合材料厚膜成型技术，2015-2018
10. 国家自然科学基金项目（青年基金），基于脉冲激光沉积富硼 B-C 薄膜的关键技术研究，2012-2014